VBUS052A-DQ2 document number 81283 rev. 1.0, 16-mar-06 vishay semiconductors www.vishay.com 1 (bottom view) (top view) 3 4 2 1 20022 2-line bus-port esd-protection features ? ultra compact llp70 package ? 2-line usb esd-protection ? high surge current: i ppm = 40 a (at 8/20 s acc. iec 61000-4-5) ? low leakage current ? low load capacitance c d < 10 pf ? esd protection to iec 61000-4-2 30 kv (contact) ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: llp70-4a (plastic package); non magnetic molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: 8.9 mg packaging codes/options: gs18 = 10 k per 13" reel (8 mm tape), 10 k/box gs08 = 3 k per 7" reel (8 mm tape), 15 k/box marking: square = pin 1 marking u1 = type code for ?VBUS052A-DQ2? s6 = date code (example only) maximum ratings and the rmal characteristics t amb = 25 c unless otherwise specified parameter symbol value unit esd contact dischar ge per iec 61000-4-2 v esd 30 kv operating temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c e3 u1 s6 20021
www.vishay.com 2 document number 81283 rev. 1.0, 16-mar-06 VBUS052A-DQ2 vishay semiconductors electrical characteristics t amb = 25 c unless otherwise specified typical characteristics t amb = 25 c unless otherwise specified parameter test conditions symbol min. ty p. max. unit reverse stand-off voltage at i r = 1 a pin 2, 3 or 4 to pin 1 v rwm 5 v max. reverse current at v r = 5 v pin 2, 3 or 4 to pin 1 i r 1a max. clamping voltage at i pp = 40 a pin 2, 3 to pin 1 acc. iec 61000-4-5 v c 18.5 20 v max. forward clamping voltage at i f = 40 a pin 1 to pin 2 or 3 acc. iec 61000-4-5 v f 7.6 9 v max. peak pulse current pin 2, 3 or 4 to pin 1 acc. iec 61000-4-5 i ppm 40 a min. reverse breakdown voltage pin 2, 3 or 4 to pin 1 at i r = 1 ma v br 68v line capacitance pin 2 or 3 to pin 1 at v r = 0 v ; f = 1 mhz c d 610pf line to line capacitance pin 2 to pin 3 at v r = 0 v ; f = 1 mhz c d23 35pf line capacitance pin 4 to pin 1 at v r = 0 v ; f = 1 mhz c zd 480 500 pf esd-immunity pin 2, 3 or 4 to pin 1 10 pulses, both polarities acc. iec 61000-4-2 device not damaged v esd 30 kv figure 1. 8/20 s peak pulse current wave form acc. iec 61000-4-5 0 % 20 % 40 % 60 % 8 0 % 100 % 0 10 20 30 40 time in s i ppm 20 s to 50 % 8 s to 100 % 19 8 42 figure 2. typical capacitance c d vs. reverse voltage v r 0 50 100 150 200 250 300 350 400 450 500 0 1 2 3 4 f = 1 mhz pin 4 to pin 1 20024 v r in v c d in pf
VBUS052A-DQ2 document number 81283 rev. 1.0, 16-mar-06 vishay semiconductors www.vishay.com 3 figure 3. typical capacitance c d vs. reverse voltage v r figure 4. typical forward current i f vs. forward voltage v f figure 5. typical reverse voltage v r vs. reverse current i r v r in v c d in pf 20025 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 2 3 4 5 6 f = 1 mhz b et w een pin 2 & 3 pin 2,3 to pin 1 v f in v i f in ma 20026 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 pin 1 to pin 2 & 3 pin 1 to pin 4 0 1 2 3 4 5 6 7 8 0.01 0.1 1 10 100 1000 10000 i r in a v r in v pin 2,3 to pin 1 pin 4 to pin 1 20027 figure 6. typical clamping volt age vs. peak pulse current i pp figure 7. typical clamping voltage at esd contact discharge (acc. iec 61000-4-2) figure 8. typical clamping performanc e at 8 kv contact discharge (acc. iec 61000-4-2) i pp in a v c in v - 10 - 5 0 5 10 15 20 010203040 pin 2 or 3 to pin 1 pin 4 to pin 1 pin 1 to pin 4 pin 1 to pin 2 or 3 meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) v r in v c d in pf 20023 - 500 - 400 - 300 - 200 - 100 0 100 200 300 400 500 600 0 5 10 15 20 25 30 acc. iec 61000-4-2 contact discharge pin 2 or 3 to pin 1 pin 4 to pin 1 pin 1 to pin 4 pin 1 to pin 2 or 3 t in ns v c-esd in v 20029 - 60 - 40 - 20 0 20 40 60 8 0 100 120 140 160 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 + 8 k v contact discharge pin 2 or 3 to pin 1
www.vishay.com 4 document number 81283 rev. 1.0, 16-mar-06 vishay VBUS052A-DQ2 vishay semiconductors application note: with the VBUS052A-DQ2 one high speed usb-port can be protected against transient voltage signals. nega- tive transients will be clamped clos e below the ground leve l while positive transients will be clamped close above the 5 v working range. an avalanche diode clamps the supply line (v bus at pin no. 4) to ground (pin no. 1). the high speed data lines, d + , d - , are connected to pin no. 2 and 3. as long as the signal voltage on the data lines is between the ground- and the v cc -level, the low capacitance pn-diodes offer a very high isolation to v bus , ground and to the other data line. but as soon as any transient signal exceed this working range, one of the pn-diodes gets in the forward mode and clamps the transient to ground or the avalanche break through voltage level. figure 9. typical clamping perfo rmance at - 8 kv contact discharge (acc. iec 61000-4-2) t in ns v c-esd in v 20030 - 120 - 100 - 8 0 - 60 - 40 - 20 0 20 40 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 - 8 k v contact discharge pin 1 to pin 2 or 3 u s b - p o r t d + d - v bus gnd r e c e i v e r ic 20031
VBUS052A-DQ2 document number 81283 rev. 1.0, 16-mar-06 vishay semiconductors www.vishay.com 5 package dimensions in mm (inches) llp70-4a 20032
www.vishay.com 6 document number 81283 rev. 1.0, 16-mar-06 VBUS052A-DQ2 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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